Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111380
Reference9 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Ultrahigh‐Speed Bipolar Transistors
3. Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors
4. InGaAs/InP composite collector heterostructure bipolar transistors
5. Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
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1. Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor Models;IEEE Transactions on Electron Devices;2007-04
2. Continuity-Equation Analysis of Hot Electron Base Transport in InP/InGaAs Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2007-02-08
3. Reduction of base-transit time of InP-GaInAs HBTs due to electron injection from an energy ramp and base-composition grading;IEEE Transactions on Electron Devices;2004-05
4. GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors;Advanced Semiconductor and Organic Nano-Techniques;2003
5. Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs;Journal of Crystal Growth;2000-02
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