Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105698
Reference25 articles.
1. Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
2. Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
3. Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
4. 10 Gbit/s bipolar laser driver
5. 4 Gbit/s pin/HBT monolithic photoreceiver
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