Author:
Feygenson A.,Ritter D.,Hamm R.A.,Smith P.R.,Montgomery R.K.,Yadvish R.D.,Temkin H.,Panish M.B.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference11 articles.
1. Asbeck, P.M.: Sze, S.M., High speed semiconductor devices, (John Wiley & Sons, New York 1990), p. 345
2. Nottenburg, R.N., Bischoff, J.C., Abeles, J.H., Panish, M.B., and Temkin, H.: Base doping effects in InGaAs/InP double heterostructure bipolar transistors, (Proc. 1986 IEDM, Los Angeles, CA p. 278–280
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