Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98083
Reference15 articles.
1. Deep levels in In0.53Ga0.47As/InP heterostructures
2. Relationship between the conduction‐band discontinuities and band‐gap differences of InGaAsP/InP heterojunctions
3. A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
4. CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfaces
5. Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures
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