Non-Kramers iron S = 2 ions in β-Ga2O3 crystals: High-frequency low-temperature EPR study
Author:
Affiliation:
1. Ioffe Institute, 194021 St. Petersburg, Russia
2. Laboratoire des Solides Irradiés, Ecole Polytechnique, CEA/DRF/IRAMIS, CNRS, Institut Polytechnique de Paris, 91128 Palaiseau, France
Abstract
Funder
Russian Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0102147
Reference32 articles.
1. A review of Ga2O3materials, processing, and devices
2. Guest Editorial: The dawn of gallium oxide microelectronics
3. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
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