Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368051
Reference29 articles.
1. 3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
2. Growth of InAsSb quantum wells for long-wavelength (∼4 μm) lasers
3. Photoluminescence of MBE-grown InAs1-xSbxlattice matched to GaSb
4. Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
5. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
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