Performance Limits of III–V Barrier Detectors-Reference-Cited by-同舟云学术

Performance Limits of III–V Barrier Detectors

Published:2020-05-20 Issue:11 Volume:49 Page:6893-6899
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Klipstein P. C.^ORCID,Benny Y.,Cohen Y.,Fraenkel N.,Gliksman S.,Glozman A.,Hirsh I.,Langof L.,Lukomsky I.,Marderfeld I.,Milgrom B.,Nitzani M.,Rakhmilevich D.,Shkedy L.,Snapi N.,Shtrichman I.,Weiss E.,Yaron N.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-020-08195-7.pdf

Reference24 articles.

1. P.C. Klipstein, Depletionless Photodiode with Suppressed Dark Current, US Patent 7,795,640 (2003).

2. P.C. Klipstein, Unipolar Semiconductor Photodetector with …, US Patent 8,004,012 (2006).

3. P.C. Klipstein, Semiconductor Barrier Photodetector, US Patent 9,627,563 (22 April 2013).

4. P.C. Klipstein, Proc. SPIE 6940, 6940-2U (2008).

5. G. Gershon, E. Avnon, M. Brumer, W. Freiman, Y. Karni, T. Niderman, O. Ofer, T. Rosenstock, D. Seref, N. Shiloah, L. Shkedy, R. Tessler, and I. Shtrichman, Proc. SPIE 10177, 10177-1I (2017).

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance InAs_1-xSb_x Detector Based on AlAs_1-ySb_y/AlSb Quantum Tunneling Barrier;IEEE Transactions on Electron Devices;2023-01

2. HOT MWIR technology at SCD;Infrared Technology and Applications XLVIII;2022-05-27

3. XBn and XBp Detectors Based on Type II Superlattices;Journal of Electronic Materials;2022-05-15

4. Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature;Nanomaterials;2022-03-21

5. Perspective on III–V barrier detectors;Applied Physics Letters;2022-02-07