Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]
2. Liquid-phase epitaxial growth of ternary InAs x Sb1?x for small amounts of InAs
3. Liquid phase epitaxial growth of InAs1-xSbx on GaSb
4. The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substrates
5. Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers
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1. Investigation on the InAs1–xSbxepilayers growth on GaAs (001) substrate by molecular beam epitaxy;Journal of Semiconductors;2018-03
2. A buffer-free method for growth of InAsSb films on GaAs (001) substrates using MOCVD;Journal of Crystal Growth;2017-06
3. Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy;Materials Science in Semiconductor Processing;2015-12
4. Surface Passivation Applicable to InAsSb/GaSb Photodiodes for Infrared Detection;SAIEE Africa Research Journal;2010-03
5. Structural, electrical, and optical properties of InAs[sub x]Sb[sub 1−x] epitaxial films grown by liquid-phase epitaxy;Journal of Applied Physics;2008
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