Transport and exchange of hydrogen isotopes in silicon-device-related stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633653
Reference37 articles.
1. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
2. Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability
3. Electrical and physical characterization of deuterium sinter on submicron devices
4. Deuterium transport through device structures
5. Giant isotope effect in hot electron degradation of metal oxide silicon devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen permeation through silicon nitride films;Journal of Alloys and Compounds;2012-10
2. Hydrogenation∕deuteration of the Si–SiO2 interface: Atomic-scale mechanisms and limitations;Applied Physics Letters;2005-03-14
3. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon;Applied Physics Letters;2004-10-18
4. Impact of mechanical stress on interface trap generation in flash eeproms;2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
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