Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon-Reference-Cited by-同舟云学术

Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

Published:2004-10-18 Issue:16 Volume:85 Page:3540-3542
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pezzi R. P.,Miotti L.,Bastos K. P.,Soares G. V.,Driemeier C.,Baumvol I. J. R.,Punchaipetch P.,Pant G.,Gnade B. E.,Wallace R. M.,Rotondaro A.,Visokay J. M.,Chambers J. J.,Colombo L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1801682

Reference25 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High-? Gate Dielectrics

3. Reaction–diffusion in high-k dielectrics on Si

4. Application of HfSiON as a gate dielectric material

5. A. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, M. J. Bevan, R. Khamankar, P. E. Nicollian, J. McPherson, and L. Colombo, IEEE International Reliability Physics Symposium Proceedings, 2003, p. 208.

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