Giant isotope effect in hot electron degradation of metal oxide silicon devices-Reference-Cited by-同舟云学术

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Giant isotope effect in hot electron degradation of metal oxide silicon devices

Published:1998 Issue:2 Volume:45 Page:406-416
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hess K.,Kizilyalli I.C.,Lyding J.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/14348/00658674.pdf?arnumber=658674

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