Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon-Reference-Cited by-同舟云学术

Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

Published:2022-10-27 Issue:11 Volume:5 Page:744-751
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Miao Jinshui^ORCID,Leblanc Chloe,Wang Jinjin,Gu Yue,Liu Xiwen,Song Baokun,Zhang Huairuo^ORCID,Krylyuk Sergiy,Hu Weida^ORCID,Davydov Albert V.^ORCID,Back Tyson,Glavin Nicholas,Jariwala Deep^ORCID

Funder

United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41928-022-00849-0.pdf

Reference42 articles.

1. Cao, Q., Tersoff, J., Farmer, D. B., Zhu, Y. & Han, S.-J. Carbon nanotube transistors scaled to a 40-nanometer footprint. Science 356, 1369–1372 (2017).

2. Iannaccone, G., Bonaccorso, F., Colombo, L. & Fiori, G. Quantum engineering of transistors based on 2D materials heterostructures. Nat. Nanotechnol. 13, 183–191 (2018).

3. Li, X. et al. Emerging steep-slope devices and circuits: opportunities and challenges. in Beyond-CMOS Technologies for Next Generation Computer Design (eds Topaloglu, R. O. & Wong, H. S. P.) 195–230 (Springer International Publishing, 2019).

4. Wu, F. et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature 603, 259–264 (2022).

5. Illarionov, Y. Y. et al. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat. Electron. 2, 230–235 (2019).

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MoS₂/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters;Advanced Functional Materials;2024-09-06

2. Wafer‐scale single‐crystal two‐dimensional materials for integrated optoelectronics;InfoScience;2024-08-27

3. A hot-emitter transistor based on stimulated emission of heated carriers;Nature;2024-08-14

4. Broadband, Gate-Tunable, and Low-Energy-Consumption Avalanche Photodetector Based on WS₂/Ge Heterostructure;IEEE Transactions on Electron Devices;2024-08

5. Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements;Journal of Physics D: Applied Physics;2024-07-31