Emerging Steep-Slope Devices and Circuits: Opportunities and Challenges-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Emerging Steep-Slope Devices and Circuits: Opportunities and Challenges

Published:2018-08-21 Issue: Volume: Page:195-230
ISSN:
Container-title:Beyond-CMOS Technologies for Next Generation Computer Design
language:
Short-container-title:

Author:

Li Xueqing,Kim Moon Seok,George Sumitha,Aziz Ahmedullah,Jerry Matthew,Shukla Nikhil,Sampson John,Gupta Sumeet,Datta Suman,Narayanan Vijaykrishnan

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-90385-9_6

Reference119 articles.

1. A.C. Seabaugh, Q. Zhang, Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010)

2. P.-F. Wang, K. Hilsenbeck, T. Nirschl, M. Oswald, C. Stepper, M. Weiss, D. Schmitt-Landsiedel, W. Hansch, Complementary tunneling transistor for low power application. Solid State Electron. 48(12), 2281–2286 (2004)

3. K.K. Bhuwalka, J. Schulze, I. Eisele, Performance enhancement of vertical tunnel field-effect transistor with SiGe in the pþ layer. Jpn. J. Appl. Phys. 43, 4073–4078 (2004)

4. J. Appenzeller, Y.-M. Lin, J. Knoch, P. Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 93(19), 196805-1–196805-4 (2004)

5. W.Y. Choi, B.-G. Park, J.D. Lee, T.-J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron. Device Lett. 28, 743–745 (2007)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Layer‐Based Si/SiGe Hetero‐Junction Line Tunnel FETs;Advanced Ultra Low‐Power Semiconductor Devices;2023-10-27

2. Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure;Advanced Functional Materials;2023-08-23

3. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon;Nature Electronics;2022-10-27

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3