Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy
Author:
Affiliation:
1. Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., Birmingham, Alabama 35233, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5140193
Reference33 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. A review of Ga2O3materials, processing, and devices
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4. A survey of acceptor dopants forβ-Ga2O3
5. First-principles study of self-trapped holes and acceptor impurities in Ga2O3 polymorphs
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