A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4770380
Reference21 articles.
1. High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
2. Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing
3. Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement
4. Hard x-ray photoelectron spectroscopy of oxide hybrid and heterostructures: a new method for the study of buried interfaces
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