Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021461
Reference23 articles.
1. Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy
2. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
3. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
4. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
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