Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1429753
Reference21 articles.
1. GaN: Processing, defects, and devices
2. Lattice and energy band engineering in AlInGaN/GaN heterostructures
3. Optical bandgap formation in AlInGaN alloys
4. Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
5. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
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2. Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition;Current Applied Physics;2011-03
3. Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth;Applied Physics Letters;2009-12-28
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