Surface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
Author:
Affiliation:
1. School of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shanxi Province
Natural Science Foundation of Shaanxi Province
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5033939
Reference24 articles.
1. The 2018 GaN power electronics roadmap
2. White light-emitting diodes: History, progress, and future
3. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
4. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
5. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
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