Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102197
Reference5 articles.
1. Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
2. Single‐crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAsxP1−x
3. Refractive index of In1−xGaxAsyP1−ylayers and InP in the transparent wavelength region
4. High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE
5. Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD;Journal of Electronic Materials;1992-03
2. Integrated‐mirror étalons for 1.3‐μm operation grown by molecular‐beam epitaxy;Journal of Applied Physics;1991-05
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