Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98825
Reference6 articles.
1. Multilayer GaAs-Al_03Ga_07As dielectric quarter wave stacks grown by molecular beam epitaxy
2. High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition
3. Multiple quantum well reflection modulator
4. Chemical beam epitaxy of InP and GaAs
5. Mode locking by synchronous pumping using a gain medium with microsecond decay times
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