Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAsp‐njunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99544
Reference8 articles.
1. Rapid Thermal Annealing in Si
2. Rapid Thermal Processing for High-Speed III-V Compound Devices
3. Rapid annealing of GaAs: Uniformity and temperature dependence of activation
4. Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs
5. Dominance of surface recombination current in planar, Be‐implanted GaAsp‐njunctions prepared by rapid thermal annealing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling the diffusion of implanted Be in GaAs;Journal of Applied Physics;1995-08
2. Modeling Diffusion in Gallium Arsenide: Recent Work;MRS Bulletin;1995-04
3. Thermal stability of silicide contacts on GaAs using the proximity technique during rapid thermal annealing;Semiconductor Science and Technology;1991-03-01
4. Low threshold current implanted‐planar buried‐heterostructure graded‐index separate confinement heterostructure laser in GaAs/AlGaAs;Applied Physics Letters;1990-05-14
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