Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96754
Reference13 articles.
1. The electrical characteristics of ion implanted compound semiconductors
2. Ion implantation in III–V compounds
3. Annealing of selenium‐implanted GaAs
4. Infrared rapid thermal annealing of Si‐implanted GaAs
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