Author:
Seidel T.E.,Pai C.S.,Lischner D.J.,Maher D.M.,Knoell R.V.,Williams J.S.,Penumalli B.R.,Jacobson D.C.
Abstract
ABSTRACTCertain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature
considerations are discussed. The implant disorder removal rate is measured
(5eV removal energy for As induced damage). Shallower defect-free junctions
are obtained using RTA. Results of a ”Round Robin”-RTA annealing are
presented, transient enhanced diffusion is not prominent for As. New results
for the concentration enhanced diffusion of As are presented. Diffusion from
the channeling-tai1 region of shallow boron diffusions is noted as a
limiting factor for producing shallow p+-junctions. Other issues
are briefly discussed.
Publisher
Springer Science and Business Media LLC
Cited by
17 articles.
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