Author:
Hodgson R. T.,Baglin J. E. E.,Michel A. E.,Mader S.,Gelpey J. C.
Abstract
ABSTRACTWe have used an ultrahigh power, 100kW vortex cooled arc lamp to anneal As+ implant damage in <100> silicon wafers. When the wafer temperature was held above 1100°C for ∼1sec, TEM analysis indicated that the material was free of extended defects.The dopant diffused much more rapidly than would be expected from the usual models. However, preliminary results indicate that defect free material can be produced with dopant movement limited to ∼100Å.
Publisher
Springer Science and Business Media LLC
Reference9 articles.
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