X-Intersected Silicon Modulator of Well-Rounded Performance
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Published:2023-07-17
Issue:7
Volume:14
Page:1435
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Zhu Zijian12ORCID, Zhao Yingxuan1ORCID, Sheng Zhen1, Gan Fuwan12
Affiliation:
1. National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China 2. University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
In silicon modulator design, implantation is always a key factor, significantly influencing the doping profile and carrier distribution. As waveguide doping is limited by the compact footprint of the modulator rib, three-dimensional complex optimization is a viable option to improve performance. This work proposes an X-intersected modulator based on two inversely slanted junctions using the effective 3D Monte Carlo method for junction generation. The optimized results show that the modulation efficiency of the design is 1.09 V·cm, while the loss is 18 dB/cm, and the 3 dB bandwidth reaches over 35 GHz owing to the decreased resistance and capacitance of the 3D junction. This work demonstrates the benefits of 3D doping design in silicon modulators, contributing to higher efficiency and avoiding additional PN overlap to introduce lower capacitance. The design of 3D doping profiles well balances the DC and AC performance, and provides novel modulator solutions for high-speed datacom.
Funder
National Key R&D Program of China National major scientific research instrument development project Shanghai Sailing Program
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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