Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106180
Reference16 articles.
1. From chemical vapor epitaxy to chemical beam epitaxy
2. Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy
3. Distributed Feedback (DFB) lasers at 1.5 μm grown by Gas Source Molecular Beam Epitaxy (GSMBE)
4. Monolithically integrated InGaAs/InP MSM-FET photo-receiver prepared by chemical beam epitaxy
5. Growth of high purity InP by metalorganic MBE (CBE)
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of AsH3 cracking temperature on the H passivation of C acceptors in In0.53Ga0.47As grown by beam epitaxy techniques;Applied Physics Letters;1996-09-23
2. On the origin of oval defects in metalorganic molecular beam epitaxy of InP;Applied Physics Letters;1995-05
3. Compact metalorganic molecular‐beam epitaxy growth system;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-09
4. Growth of heavy carbon‐doped GaInAs lattice matched to InP by chemical beam epitaxy;Applied Physics Letters;1994-06-06
5. Kinetic surface roughening in molecular beam epitaxy of InP;Physical Review Letters;1993-06-28
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