Monolithically integrated InGaAs/InP MSM-FET photo-receiver prepared by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. A GaAs MESFET IC for optical multiprocessor networks
2. GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy
3. Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3–1.55 μm optical receivers
4. Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices
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