Simulation of transient boron diffusion during rapid thermal annealing in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347466
Reference22 articles.
1. Transient enhanced diffusion of ion‐implanted boron in Si during rapid thermal annealing
2. Transient enhanced diffusion in arsenic‐implanted short time annealed silicon
3. Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing
4. Transient enhanced diffusion of phosphorus in silicon
5. Diffusion of phosphorus during rapid thermal annealing of ion‐implanted silicon
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1. Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si0.75Ge0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant;Defect and Diffusion Forum;2010-12
2. Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals;Defect and Diffusion Forum;2010-10
3. Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon;Physica E: Low-dimensional Systems and Nanostructures;2008-04
4. Pair diffusion and kick-out: Contributions to diffusion of boron in silicon;AIChE Journal;2004
5. Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma;Journal of Physics D: Applied Physics;2001-03-20
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