Transient enhanced diffusion of ion‐implanted boron in Si during rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339914
Reference11 articles.
1. Rapid thermal annealing of arsenic and boron‐implanted silicon
2. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
3. Transient‐Enhanced Diffusion during Furnace and Rapid Thermal Annealing of Ion‐Implanted Silicon
4. Transient enhanced diffusion of dopants in silicon induced by implantation damage
5. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
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