1. Aleksandrov, O.V. and Afonin, N.N., Effect of Oxidizing Atmosphere on Boron Diffusion and Segregation in the Thermal Oxide-Silicon System, Zh. Tekh. Fiz., 2003, vol. 73, no.5, pp. 57–63.
2. Turmond, C.D., Distribution Coefficients of Impurities Distributed between Ge or Si Crystals and Ternary Alloys of Surface Oxides, Properties of Elemental and Compounds Semiconductors, Gatos, H.C., Ed., New York, 1960, vol. 5, pp. 121–138.
3. Grove, A.S., Leistiko, O., and Sah, C.T., Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon, J. Appl. Phys., 1964, vol. 35, no.9, pp. 2695–2701.
4. Sakamoto, K., Nishi, K., Ichikawa, F., and Ushio, S., Segregation and Transport Coefficients of Impurities at the Si/SiO2 Interface, J. Appl. Phys., 1987, vol. 61, no.4, pp. 1553–1555.
5. Lau, F., Mader, L., Mazure, C., et al., A Model for Phosphorus Segregation at the Silicon-Silicon Dioxide Interface, Appl. Phys. A, 1989, vol. 49, pp. 671–675.