Nitrogen related doping with implant Si3N4formation in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96547
Reference7 articles.
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4. Nitrogen−implanted silicon. II. Electrical properties
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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2. Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry;Journal of Applied Physics;2004-09-15
3. Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation;Journal of Applied Physics;1998-04
4. Properties of nitrogen-implanted SOI substrates;IEEE Transactions on Electron Devices;1993
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