Nitrogen−implanted silicon. II. Electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321340
Reference15 articles.
1. Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation
2. Nitrogen-ion implantation onp-silicon in the energy range between 20 and 215 keV
3. Lateral photovoltaic effect in nitrogen‐implanted p‐type silicon
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3. Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles;Nanomaterials;2023-07-21
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