Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-16114-w.pdf
Reference47 articles.
1. Marcon, D., Saripalli, Y. N. & Decoutere, S. 200 mm GaN-on-Si Epitaxy and e-mode DeviceTechnology (Invited), Electron Devices Meeting, 2015 IEEE International (IEDM). Washington DC, USA, https://doi.org/10.1109/IEDM.2015.7409709 IEEE (2015 December 7–9).
2. Bhat, T. N. et al. Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates. Journal of Vacuum Science & Technology B 32, 021206, https://doi.org/10.1116/1.4866429 (2014).
3. Krost, A. & Dadgar, A. GaN-Based Devices on Si. Physica status solidi (a) 194, 361–375, https://doi.org/10.1002/1521-396x(200212)194:2<361::aid-pssa361>3.0.co;2-r (2002).
4. Van Hove, M. et al. CMOS process-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon. IEEE Electron Device Letters 33, 667–669 (2012).
5. Moens, P. et al. An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric, Power Semiconductor Devices & IC’s (ISPSD), 2014 IEEE 26th International Symposium on. Waikola, HI, USA, https://doi.org/10.1109/ISPSD.2014.6856054 , IEEE (2014 June 15–19).
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