Nitrogen-ion implantation onp-silicon in the energy range between 20 and 215 keV-Reference-Cited by-同舟云学术

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Nitrogen-ion implantation onp-silicon in the energy range between 20 and 215 keV

Published:1968-10 Issue:2 Volume:57 Page:534-536
ISSN:0369-3554
Container-title:Il Nuovo Cimento B Series 10
language:en
Short-container-title:Nuov Cim B

Author:

Cianfrone F.,Fasoli U.,Mazzoldi P.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

http://link.springer.com/content/pdf/10.1007/BF02710221.pdf

Reference7 articles.

1. R. R. Ferber:IEEE Trans. Nucl. Sci.,10, 15 (1963).

2. P. V. Pavlov, E. I. Zonin, D. I. Tetel’Baum andYu. S. Popov:Sov. Phys. Dokl.,10, 786 (1966).

3. W. J. Kleinfender, W. S. Johnson andJ. F. Gibbons:Canad. Journ. Phys.,46, 597 (1968).

4. G. H. Schwuttke, K. Brack, E. E. Gardner andM. M. Deangelis:Radiation Effects in Semiconductors, Ed.F. L. Vook (New York, 1968), p. 406.

5. The wafers were supplied by S.G.S. Fairchild, Agrate (Milano).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Generation and Dissociation of the Nitrogen-Related Donor in Nitrogen-Doped CZ-Si during Heat Treatments;Physica Status Solidi (a);1996-05-16

2. Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation;The Physics and Technology of Amorphous SiO2;1988

3. Nitrogen as dopant in silicon and germanium;Physica Status Solidi (a);1976-05-16

4. Nitrogen−implanted silicon. II. Electrical properties;Journal of Applied Physics;1975-01

5. Semiconductor Doping by Ion Implantation;Semiconductors;1972

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