A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates
Author:
Affiliation:
1. Department of Materials Science & Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA
Funder
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0020313
Reference23 articles.
1. Structure of vapor‐deposited GaxIn1−xAs crystals
2. Tilt of InGaN layers on miscut GaN substrates
3. Systematic Investigation ofc-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
4. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
5. Crystallographic tilt in GaN-on-Si (111) heterostructures grown by metal–organic chemical vapor deposition
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