Structure of vapor‐deposited GaxIn1−xAs crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663861
Reference12 articles.
1. Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodes
2. InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER
3. Preparation of Epitaxial Ga[sub x]In[sub 1−x]As
4. Liquid-Phase Epitaxy of In× GA1−×As
5. Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate
Cited by 314 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Local measurement of weak stresses on the surface of HgCdTe/CdTe/ZnTe/GaAs structures using the null method;Journal of Applied Physics;2023-11-08
2. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers;Materials;2023-06-08
3. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11
4. Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates;physica status solidi (RRL) – Rapid Research Letters;2022-10-25
5. Graphoepitaxial Y:ZrO2 films on vicinal (110) NdGaO3 substrates by pulsed laser deposition;Applied Physics A;2022-04-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3