Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1660904
Reference4 articles.
1. Thermal and Electrical Transport in InAs‐GaAs Alloys
2. Preferential Etching and Etched Profile of GaAs
3. Preparation of Epitaxial Ga[sub x]In[sub 1−x]As
4. Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique
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