Tilt of InGaN layers on miscut GaN substrates-Reference-Cited by-同舟云学术

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Tilt of InGaN layers on miscut GaN substrates

Published:2010-06-17 Issue:7 Volume:4 Page:142-144
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Kryśko M.,Domagala J. Z.,Czernecki R.,Leszczynski M.,Perlin P.,Suski T.,Grzanka Sz.,Targowski G.,Grzegory I.,Boćkowski M.,Porowski S.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Structure of vapor‐deposited GaxIn1−xAs crystals

2. Investigation of crystallographic tilting in GaSb/GaAs heteroepitaxial structure by high-resolution X-ray diffraction

3. Crystallographic tilting in high‐misfit (100) semiconductor heteroepitaxial systems

4. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

5. Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN;Acta Materialia;2024-09

2. Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors;Journal of Physics D: Applied Physics;2023-04-12

3. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11

4. Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates;physica status solidi (RRL) – Rapid Research Letters;2022-10-25

5. A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates;Journal of Applied Physics;2021-01-14

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