Impacts of Co doping on ZnO transparent switching memory device characteristics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Impacts of Co doping on ZnO transparent switching memory device characteristics

Published:2016-05-02 Issue:18 Volume:108 Page:183506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Simanjuntak Firman Mangasa¹^ORCID,Prasad Om Kumar²^ORCID,Panda Debashis³^ORCID,Lin Chun-An⁴,Tsai Tsung-Ling⁴,Wei Kung-Hwa¹,Tseng Tseung-Yuen⁴

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

2. Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008, India

4. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948598

Reference34 articles.

1. Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

2. Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming

3. Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

4. One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring the electrochemical properties of lithium-ion battery electrodes composed of vacancy-defective zinc-substituted magnetite nanocrystallites;Journal of Alloys and Compounds;2024-05

2. Realization of future neuro-biological architecture in power efficient memristors of Fe3O4/WS2 hybrid nanocomposites;Nano Energy;2024-04

3. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

4. Hysteresis Resonance and Multi-Pinched Hysteresis Loops in Cu/Cu:ZnO/Cu Resistive Switching Devices;IETE Journal of Research;2023-10-26

5. Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application;Materials Letters;2023-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3