Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode-Reference-Cited by-同舟云学术

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Published:2015-07-14 Issue:21 Volume:50 Page:6961-6969
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Simanjuntak Firman Mangasa,Panda Debashis,Tsai Tsung-Ling,Lin Chun-An,Wei Kung-Hwa,Tseng Tseung-Yuen

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-015-9247-y.pdf

Reference38 articles.

1. Minami T, Nanto H, Takata S (1984) Highly conductive and transparent aluminium doped zinc oxide thin films prepared by RF magnetron sputtering. Jpn J Appl Phys 23:L280–L282. doi: 10.1143/JJAP.23.L280

2. Tang MH, Jiang B, Xiao YG, Zeng ZQ, Wang ZP, Li JC, He J (2012) Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate. Microelectron Eng 93:35–38. doi: 10.1016/j.mee.2011.12.003

3. Peng HY, Li GP, Ye JY, Wei ZP, Zhang Z, Wang DD, Xing GZ, Wu T (2010) Electrode dependence of resistive switching in Mn-doped ZnO: filamentary versus interfacial mechanisms. Appl Phys Lett 96:192113. doi: 10.1063/1.3428365

4. Xu D, Xiong Y, Tang M, Zeng B (2013) Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices. Appl Phys A 114:1377–1381. doi: 10.1007/s00339-013-7994-7

5. Chen M-C, Chang T-C, Tsai C-T, Huang S-Y, Chen S-C, Hu C-W, Sze SM, Tsai M-J (2010) Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films. Appl Phys Lett 96:262110. doi: 10.1063/1.3456379

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