Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927284
Reference33 articles.
1. All Solution-Processed, Fully Transparent Resistive Memory Devices
2. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures
3. Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
4. Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method
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