Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04614.pdf
Reference24 articles.
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3. Chen, L. et al. Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM. IEEE Electron Device Lett. 31, 356–358 (2010).
4. Ji, Y., Lee, S., Cho, B., Song, S. & Lee, T. Flexible Organic Memory Devices with Multilayer Graphene Electrodes. ACS Nano 5, 5995–6000 (2011).
5. Kim, H.-D., An, H.-M., Seo, Y. & Kim, T. G. Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors. IEEE Electron Device Lett. 32, 1125–1127 (2011).
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