Electrical characterization of He-plasma processed n-GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368329
Reference15 articles.
1. An Overview of Dry Etching Damage and Contamination Effects
2. Carrier lifetimes in ion‐damaged GaAs
3. Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown n-GaAs
4. The influence of low‐energy argon implantation on gallium arsenide Schottky barriers
5. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
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3. Effects of low-energy ion beam glancing angle nitridation on nGaAs surface and Co–nGaAs Schottky contact properties;Vacuum;2004-12
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