Reduction of effective barrier height and low-frequency noise of Al–GaAs Schottky contacts by hydrocarbon ion beam irradiation-Reference-Cited by-同舟云学术

Reduction of effective barrier height and low-frequency noise of Al–GaAs Schottky contacts by hydrocarbon ion beam irradiation

Published:2003-10 Issue:10 Volume:47 Page:1713-1718
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Meškinis S.,Balčaitis G.,Matukas J.,Palenskis V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Influence of the semiconductor substrate surface treatment on electrical characteristics of the metal–gallium arsenide contact;Palenskis;Lith. J. Phys.,1996

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