Wet oxidation of amorphous Si‐Ge layer deposited on Si(001) at 800 and 900 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352255
Reference11 articles.
1. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
2. Growth of GeSi/Si strained‐layer superlattices using limited reaction processing
3. Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation
4. Formation of epitaxial Si1−xGexfilms produced by wet oxidation of amorphous SiGe layers deposited on Si(100)
5. The mechanism of epitaxial Si‐Ge/Si heterostructure formation by wet oxidation of amorphous Si‐Ge thin films
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1. Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers;Applied Surface Science;2006-11
2. Self-assembled germanium nano-structures by laser-assisted oxidation;Chinese Physics;2006-01-16
3. A Study on the Formation Processes and Microstructures of Ni Germanosilicide Films on Si[sub 1−x]Ge[sub x](x=0.1 and 0.2);Journal of The Electrochemical Society;2006
4. PL SPECTRA AND QUANTUM CONFINEMENT ANALYSIS OF Ge NANOSTRUCTURE IN RAPID OXIDATION OF SiGe SUBSTRATE;Modern Physics Letters B;2005-12-30
5. Kinetics and Mechanism of Nanostructures in Oxidation of Si 1- x Ge x Alloys;Chinese Physics Letters;2002-11
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