Growth of GeSi/Si strained‐layer superlattices using limited reaction processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337960
Reference10 articles.
1. Limited reaction processing: Silicon epitaxy
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4. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
5. Electron mobility enhancement in epitaxial multilayer Si‐Si1−xGexalloy films on (100) Si
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