Electron transport across aluminum/ultrathin silicon oxide/phosphorus implanted silicon barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328364
Reference12 articles.
1. Theory of Field Emission from Semiconductors
2. Field and thermionic-field emission in Schottky barriers
3. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
4. Thermionic-field emission through silicon Schottky barriers at room temperature
5. Application of high‐rate E×B or magnetron sputtering in the metallization of semiconductor devices
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1. Calculation of Ohmic Contact Resistance at a Metal/Silicon Interface;physica status solidi (a);1999-10
2. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics;Journal of Applied Physics;1996-05-01
3. Fermi-level pinning at nickel disilicide–silicon interface;Physical Review B;1989-06-15
4. Phosphorus redistribution during nickel silicide formation;Journal of Applied Physics;1988-07-15
5. Oxidation of Si Substrate during Al Evaporation;Journal of the Japan Institute of Metals;1986
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