Fermi-level pinning at nickel disilicide–silicon interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.13323/fulltext
Reference18 articles.
1. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
2. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
3. Schottky barrier height measurements of epitaxial NiSi2 on Si
4. Schottky barriers of epitaxial NiSi2on Si(111)
5. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
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1. Reduced Distribution of Threshold Voltage Shift in Double Layer NiSi2 Nanocrystals for Nano-Floating Gate Memory Applications;Journal of Nanoscience and Nanotechnology;2011-12-01
2. Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation;IEEE Electron Device Letters;2009-11
3. Structural and electronic properties of thin fluorite-structure NiSi2, CoSi2and FeSi2interfaces and precipitates in Si;physica status solidi (a);2005-04
4. Silicide-Silicon Schottky Barrier Heights Calculated Using an Interface-Defect Model;Japanese Journal of Applied Physics;1998-05-15
5. Atomic-Configuration-Dependent Energy at Epitaxial Silicide-Silicon Interfaces;Japanese Journal of Applied Physics;1998-02-15
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