Schottky barriers of epitaxial NiSi2on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99527
Reference14 articles.
1. Advances in understanding metal-semiconductor interfaces by surface science techniques
2. Recent models of Schottky barrier formation
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Epitaxial silicides
5. Growth of single crystal epitaxial silicides on silicon by the use of template layers
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