Deformation potentials of Si-doped GaAs from microscopic residual stress fields
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798603
Reference42 articles.
1. Fundamentals of Semiconductors
2. Band-gap shifts in heavily dopedn-type GaAs
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4. Study of band gap narrowing effect in n-GaAs for the application of far-infrared detection
5. Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1−xAs quantum wells from below to above the metallic limit
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1. Nanometer-scale cathodoluminescence analysis of GaAs and its application to the assessment of laser diode;physica status solidi (a);2011-03-22
2. Polarized Raman spectroscopy clarifies the effect of crystal anisotropy on elastic stress fields developed on the surface of silicon single-crystal;physica status solidi (a);2011-03-11
3. Spatially resolved Raman and cathodoluminescence probes in electronic materials: Basics and applications;physica status solidi (a);2010-12-17
4. Stress Perturbation Method for the Assessment of Cathodoluminescence Probe Response Functions;Applied Spectroscopy;2009-02
5. Direct determination of intrinsic In x Ga1-x P (x = 0.49) band-gap deformation potentials by cathodoluminescence piezo-spectroscopy;physica status solidi (b);2008-10-10
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